Chinese scientists unveil the world’s smallest ferroelectric transistor with ultralow power and tiny gate for future AI chips ...
By engineering the device structure of ferroelectric memory and introducing a nanogate-induced electric field concentration effect, the researchers developed a ferroelectric transistor capable of ...
New technical paper titled “Multi-functional multi-gate one-transistor process-in-memory electronics with foundry processing and footprint reduction” from researchers at Ningbo Institute of Materials ...
Peking University announced that the research team led by Qiu Chenguang and Peng Lianmao from the School of Electronics had ...
As transistor sizes shrink, short channel effects make it more difficult for transistor gates to turn a transistor ON and OFF [1]. One method to overcome this problem is to move away from planar ...
Silicon’s elasticity has been under threat for some time and a joint paper in Science from UC Berkeley, Stanford, the Lawrence Berkeley National University and the University of Texas could spell the ...
The research 'Impact of Contact Gating on Scaling of Monolayer 2D Transistors Using a Symmetric Dual-Gate Structure' appeared ...
Physicists at the University of California, Riverside have received a $1.85 million research grant to work on "magnetologic gates," a brand new computing building block made from graphene and magnetic ...
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