IXYS announced the expansion of its high voltage power MOSFET product line, the 2000 V n-channel power MOSFET featuring 1 A current rating specifically designed for high voltage, high speed power ...

In today’s automotive and industrial electronics, low-voltage MOSFETs (<100 V) have seen an increased demand for high power. Applications such as motor drives now require power output in the kilowatts ...

TOKYO--(BUSINESS WIRE)--Mitsubishi Electric Corporation (TOKYO: 6503) announced today that it will launch a 50W silicon radio-frequency (RF) high-power metal-oxide semiconductor field-effect ...

Santa Clara, CA and Kyoto, Japan, April 10, 2025 (GLOBE NEWSWIRE) -- ROHM Semiconductor has developed N-channel power MOSFETs featuring industry-leading* low ON-resistance and wide SOA capability.

The EPC2366 40 V eGaN® FET sets new benchmarks in performance, efficiency, and power density for next-generation power ...

KAWASAKI, Japan--(BUSINESS WIRE)--Toshiba Electronic Devices & Storage Corporation ("Toshiba") has added DTMOSVI(HSD), power MOSFETs with high-speed diodes suitable for switching power supplies, ...

ROHM Co., Ltd. has developed the 100V power MOSFET--RS7P200BM--achieving industry-leading safe operating area (SOA) performance in a 5060-size (5.0mm x 6.0mm) package. This product is ideal for ...

SemiQ’s SOT-227 SiC power modules, which are tested beyond 1,400 V, target battery chargers, photovoltaic inverters, server ...

X-REL Semiconductor has broadened its XTR2N family of high-temperature MOSFET transistors by introducing two new mid-power P-channel and two small-signal P- and N-channel transistors. X-REL ...